THE APPLICATION OF SURFACE ANALYSIS TECHNIQUES FOR MONITORING HYDROGEN TERMINATION CLEANING PROCESSES

摘要

The applications of attenuated total reflection-Fourier transform infrared spectroscopy, spectroscopic ellipsometry, surface wetting, and ion beam techniques for monitoring processes used to create hydrogen-terminated silicon (100) surfaces are discussed. A technique for preserving H-passivated surfaces during transport is described. Different HF/alcohol oxide etch solutions and alcohol rinses were compared to standard HF/H{sub}2O cleans. Aqueous HF and HF/methanol solutions provided the most hydrogen termination. Ethanol and isopropyl alcohol rinses reduced adsorbed water and organic contamination during wafer transport. A new accessory was used to perform infrared spectroscopy on whole silicon wafers.