Enhanced Stimulated Raman Scattering in silicon nanocrystals embedded in silicon-rich nitride/silicon superlattice structures

摘要

In this paper, a significant enhancement of the gain coefficient in Raman amplifier using nanostructured silicon clusters embedded in Si-rich nitride/Silicon superlattice structures (SRN/Si-SLs) is experimentally demonstrated. The measured gain enhancement is approximately a factor four larger than the value (0.076 cm/MW) reported for bulk silicon.