8xx nm Laser Diode Arrays for High-Temperature and High-Power QCW Applications

摘要

Northrop Grumman Cutting Edge Optronics (NGCEO) has developed high-power laser diode arrays designed to operate at high junction temperatures in quasi-CW applications. These arrays are based on 80x nm and 88x nm wavelength diode bars and are packaged using AuSn solder and coefficient of thermal expansion (CTE)-matched heat sinks. This paper includes performance data from multiple bar designs. Specifically, results are presented detailing the high temperature operation of NGCEO's standard 80x nm laser diode bars at junction temperatures greater than 150°C at a wide range of device currents. Results are fit to an empirical model of the temperature effects on the devices' optical output. The high-temperature performance of these diode arrays makes them well suited for harsh environment applications in which water-cooled heat sinks are not feasible.