Semiconductor nanowires in InP and related material systems: MBE growth and properties

机译：INP和相关材料系统中的半导体纳米线：MBE生长和性质

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In this work, we report on the Au-assisted MBE of various InP and related material NWs on InP(111)B substrates. The influence of growth conditions on the InAsP insertion geometry and composition in InP nanowire is evidenced. Ex-situ thermal annealing produces significant changes to the PL spectra of these heterostructures. It is shown that InP/InAsP/InP heterostructures are well suited for fabrication of emitters in the telecommunication wavelength range 1.3–1.55 μm.

机译：在这项工作中，我们在INP（111）B基板上报告各种INP和相关材料NWS的AU辅助MBE。证明了在INP纳米线中不适应的生长条件对InP纳米线中的成分的影响。前原位热退火产生这些异质结构的PL光谱的显着变化。结果表明，INP / INASP / INP异质结构非常适合于在电信波长范围1.3-1.55μm的电信波长范围内的发射器制造。

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《International Conference on Indium Phosphide Related Materials》|2008年||共5页
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Cirlin G.E.; Dubrovskii V.G.; Harmand J.-C.; Patriarche G.; Glas F.; Tchernycheva M.; Sartel C.;
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中图分类 TN248.4-53;
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InP; molecular beam epitaxy; nanowires; photoluminescence; scanning electron microscopy; transmission electron microscopy;

机译：InP;分子束外延;纳米线;光致发光;扫描电子显微镜;透射电子显微镜;

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1. MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer [J] . Reznik R. R., Kotlyar K. P., Ilkiv I. V., Semiconductors . 2018,第11期

机译：用石墨烯层的间隙和INP纳米线的长期生长和结构特性
2. Growth and properties of self-assembled InP-nanoneedles on (001) InP by gas source MBE [J] . M. Chashnikova, A. Mogilatenko, O. Fedosenko, Journal of Crystal Growth . 2011,第1期

机译：气源MBE在（001）InP上自组装InP纳米酮的生长和性能
3. The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV-CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowires [J] . Cantelli V., Geaymond O., Ulrich O., Journal of synchrotron radiation . 2015,第3期

机译：ESRF BM32光束线的表面（INS）终端站上的纳米结构的原位生长：组合的UHV-CVD和MBE反应器，用于生长的纳米颗粒和半导体纳米线的原位X射线散射研究
4. Semiconductor nanowires in InP and related material systems: MBE growth and properties [C] . Cirlin G.E., Dubrovskii V.G., Harmand J.-C., International Conference on Indium Phosphide Related Materials . 2008

机译：INP和相关材料系统中的半导体纳米线：MBE生长和性质
5. MBE-VLS grown zinc selenide and zinc sulfide nanowires: Growth mechanisms and photoluminescence properties. [D] . Chan, Siu Keung. 2007

机译：MBE-VLS生长的硒化锌和硫化锌纳米线：生长机理和光致发光特性。
6. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties [O] . Mark-Daniel Gerngross, Jürgen Carstensen, Helmut Föll 2014

机译：超高长宽比InP膜中Co纳米线的电化学生长：生长过程和磁性能的FFT-阻抗谱
7. Optical properties of novel semiconductor nanostructures : wurtzite InP/InAs/InP core-multishell nanowires [O] . 後藤健, ゴトウケン 2009

机译：新型半导体纳米结构的光学性质：纤锌矿InP / InAs / InP核-多壳纳米线
8. MBE Growth of Material Systems for Semiconductor Nanostructures [R] . Kilpelae, O., Sinkkonen, J., Novikov, S. 1997

机译：半导体纳米结构材料系统的mBE增长

Semiconductor nanowires in InP and related material systems: MBE growth and properties

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