Epitaxial growth of colossal magnetoresistive films onto Si(100)

摘要

We report the growth of colossal magnetoresistive (CMR) films La_(0.7)Ca_(0.3)MnO_3 (LCMO) and La_(0.9)Ba_(0.1)MnO_3 (LBMO) onto Si (100) using a simple pulsed-laser deposition technique. To avoid oxidation of the Si surface, an initial growth of SrTiO_3 of a few atomic layers was carried out. We found that epitaxial growth of LCMO and LBMO films on Si can be realized by optimizing the deposition process. The obtained LCMO and LBMO films show ferromagnetic nature and the resulted LCMO/Si and LBMO/Si heterojunctions exhibit good rectifying behavior with magnetically tunable characteristics.