CMOS integrated circuits; integrated circuit design; millimetre wave phase shifters; passive networks; CMOS active switches; CMOS technology; differential IQ phase shifter; frequency 100 GHz; frequency 97 GHz to 106 GHz; passive components; power 39 mW; size 28 nm; voltage 1 V; CMOS integrated circuits; CMOS technology; Couplers; Impedance matching; Measurement uncertainty; Phase measurement; Phase shifters; CMOS Active Switches; Differential I-Q Phase Shifters; Millimeter Waves; Phased Arrays; W-Band Phase Shifters;
机译:具有可变增益低噪声放大器的K / KA / V TRIB和单信号路径接收器和28 nm CMOS中的恒定增益相移器
机译:采用28 nm CMOS的57–67 GHz高度紧凑的双向3位移相器
机译:28nm CMOS中的W波段移相器
机译:采用28nm CMOS的97-106GHz差分I-Q移相器
机译:CMOS无线相移发射器。
机译:具有嵌入式PMOSFET的鲁棒和锁定的免疫LVTSCR器件用于28 nm CMOS过程中的ESD保护
机译:紧凑型差动相移量子接收器由SOI / BICMOS微环谐振器辅助
机译:0到700-meV能量区域的pION-NUCLEON差分截面在库仑散射幅度,库仑相位和核相位上升到&= 4