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Cross talk measurements of a time-gated 4×128 SPAD array for pulsed Raman spectroscopy

机译:用于脉冲拉曼光谱的跨谈时间门控4×128 SPAD阵列的跨谈测量

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A time-gated 4×128 Single Photon Avalanche Diode (SPAD) line array with a 512-channel Time-to-digital converter (TDC) has been designed and fabricated in a 0.35 μm high voltage CMOS technology for pulsed Raman spectroscopy. In Raman spectroscopy the SPAD array can be designed as a line array with a high fill factor because electronics can be designed on either side of the SPAD array. In this paper cross talk measurements of the array have been carried out to investigate the probability of the cross talk between adjacent SPADs in an array with high density. Measurements showed a cross talk probability of 0.11% with a pitch of adjacent SPADs of 32 μm. In addition, the largest probability of the cross talk was measured to occur with a short delay.
机译:具有512通道时对数字转换器(TDC)的时通4×128单光子雪崩二极管(SPAD)线阵列已经设计和制造在0.35μm的高压CMOS技术中,用于脉冲拉布光谱。在拉曼光谱中,SPAD阵列可以设计为具有高填充因子的线阵列,因为电子设备可以设计在SPAD阵列的任一侧。在本文中,已经执行了阵列的跨谈测量,以研究具有高密度的阵列中相邻的侧面之间的交叉谈话的概率。测量显示横向谈话概率为0.11%,间距为32μm。此外,测量串扰的最大概率以发生短延迟。

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