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A 2.1 μW 76 dB SNDR DT-△∑ Modulator for Medical Implant Devices

机译:用于医用植入装置的2.1μW76 DB SNDR DT-Σ调制器

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This paper presents a low-power 2~(nd)-order discrete-time (DT) △∑ analog-to-digital converter (ADC) aimed for medical implant devices. The designed △∑ modulator with two active integrators (filters) employs power-efficient two-stage load-compensated OTAs with minimal load and rail-to-rail output swing, which provides higher power-efficiency than the two-stage Miller OTA. The modulator, implemented in a 65nm CMOS technology with a core area of 0.033 mm~2, achieves 76-dB peak SNDR over a 500 Hz signal bandwidth, while consuming 2.1 μW from a 0.9 V supply voltage. Compared to previously reported modulators for such signal bandwidths, the achieved performance (FOM of 0.4 pJ/step) make the presented modulator one of the best among sub-l-V modulators in term of most commonly used figure of merit.
机译:本文介绍了旨在医疗植入装置的低功耗2〜(ND)序列的离散时间(DT)Σ模数转换器(ADC)。具有两个有源积分器(过滤器)的设计的△Σ调制器采用功率有效的两级负载补偿OTA,具有最小的负载和轨到轨输出摆动,其提供比两级米勒OTA更高的功率效率。在具有0.033mm〜2的核心区域的65nm CMOS技术中实现的调制器实现了76-DB峰值SNDR,超过500 Hz信号带宽,同时从0.9V电源电压消耗2.1μW。与先前报告的这种信号带宽的调制器相比,所实现的性能(0.4 pJ /步骤)使呈现的调制器在最常用的优点中的术语中的子L-V调节器中最好的调制器。

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