Preparation of CuIn1-xGaxSe2 Films by Selenization of Metal Precursors Using Diethylselenide as a Less-Hazardous Source

摘要

A metalorganic selenide, diethylselenide [(C_2H_5)_2Se: DESe], was shown to be a suitable less-hazardous source for the preparation of CuInGaSe_2 alloy films for solar cell application by the selenization of Cu-In-Ga precursors. Approximately 2.0-μm-thick, single-phase, polycrystalline CuInGaSe_2 (0 ≤ x ≤ 0.28) films were successfully formed, and their photoluminescence spectra at low temperature were dominated by the defect-related donor-acceptor pair and free electron-accepter emissions peculiar to the films used for photo-absorbing layer of state-of-the-art CuInGaSe_2-based solar cells.