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Fabrication of Szed-graded Quantum Dots for PV via Picosecond Pulsed Laser Ablation

机译:通过PICOSECOND脉冲激光烧蚀的PV制造SZED级量子点

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Pulsed laser deposition experiments were performed with a frequency tripled 30 ps pulse width Nd:YAG laser. The target, an undoped < 111 > Si wafer, and the substrate are contained in a vacuum chamber with a base pressure of 1 x 10~(-7) torr. Freshly cleaved mica was used as the substrates for samples studied with atomic force microscopy (AFM), while fused silica (SiO2) was used for samples studied by optical absorption. AFM measurements were performed with a DI Nanoscope III in tapping mode to avoid displacement of the nanoparticles. Particle sizes were obtained by using a 2D peak finding computer program to analyze digitized height mode images from the Nanoscope. AFM samples were made with low shot numbers so individual particles could be clearly resolved and to avoid particles stacking. Another example is also given the use of pulsed laser ablation to fabricate InAs Quantum dots with excellent stoichiometry.
机译:用频率三倍的30ps脉冲宽度Nd:YAG激光进行脉冲激光沉积实验。目标,未掺杂的<111> Si晶片,以及基板包含在真空室中,基部压力为1×10〜(-7)托。新鲜切割的云母用作用原子力显微镜(AFM)研究的样品的基材,而熔融二氧化硅(SiO 2)用于通过光学吸收研究的样品。用攻丝模式用DI纳米镜III进行AFM测量以避免纳米颗粒的位移。通过使用2D峰值查找计算机程序获得粒度,以分析来自纳米腔的数字化高度模式图像。 AFM样品采用低拍摄号码制成,因此可以清楚地解决单个颗粒并避免粒子堆叠。另一个例子还用于使用脉冲激光烧蚀以制造具有优异化学计量的量子点。

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