Low threshold GaInAs quantum well lasers grown under low growth rate by solid-source MBE for 1200 nm wavelength range

摘要

Optical property dependence on growth rates of highly-strained GaInAs quantum wells (QWs) on GaAs was studied by solid-source molecular beam epitaxy (MBE). Noticeable improvement of the photolumi-nescence (PL) was observed by lowering the growth rate of highly-strained GaInAs. A sample grown at a growth rate of 0.05 μm/h under a low growth temperature and high As pressure showed a high PL intensity and a flat surface in atomic force microscope (AFM) measurements. The lowest threshold current density of 117 A/cm~2/well is achieved for GaInAs/GaAs double QW lasers at 1190 nm wavelength. A low growth rate is found to be effective to grow highly-strained GaInAs QWs.