New origins of stimulated emission and temperature dependence in ZnO

摘要

Lasing mechanisms in ZnO near the Mott density was investigated by temperature dependent gain in a ZnO thin film using a variable stripe length method (VSLM). Below the Mott density, gain is attributed to exciton-longitudinal optical phonon scattering and inelastic exciton-exciton scattering, which are dominated up to 130K. Above the Mott density, we found an additional gain mechanism of electron-hole plasmon-phonon mixed state, which survives up to RT.