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EFFECT OF TEMPERATURE ON PAD CONDITIONING PROCESS DURING CHEMICAL-MECHANICAL PLANARIZATION

机译:温度对化学机械平面化垫调节过程的影响

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Pad conditioning process is one of the crucial process steps during chemical-mechanical planarization (CMP). Pad needs to be conditioned at regular time intervals to regenerate a rough surface in order to maintain consistent and optimum polishing process. Inconsistent pad conditioning directly affects the repeatability of the process outcome. Thus, it is essential to study the factors influencing the conditioning process. In the present research, the effect of temperature on the pad conditioning process has been investigated. Polishing pads were conditioned at different temperatures, during which the coefficient of friction and pad wear were monitored, then patterned copper wafers were polished subsequently on a bench-top CMP tester mod. CP-4. Post-CMP wafer surfaces were characterized for dishing and surface non-uniformity. An atomic force microscope integrated into the Universal Nano & Micro Tester (UNMT) was used for imaging wide isolated lines for dishing characteristics.
机译:垫调节过程是化学机械平面化(CMP)期间的关键工艺步骤之一。垫需要按规则间隔调节以再生粗糙表面以保持一致和最佳的抛光过程。不一致的焊盘调节直接影响过程结果的可重复性。因此,必须研究影响调理过程的因素。在本研究中,研究了温度对垫调节过程的影响。在不同温度下调节抛光垫,在此期间监测摩擦系数和垫磨损,然后在台式CMP测试仪MOD上抛光图案化铜晶片。 CP-4。后CMP晶片表面的特征在于凹陷和表面不均匀性。用于通用纳米和微型测试仪(UNVT)的原子力显微镜用于成像宽隔离线,用于凹陷特性。

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