Extended (180V) voltage in 0.6μm thin-layer-SOI A-BCD3 technology on 1μm BOX for display, automotive consumer applications

摘要

In this paper the extension to 180V of a compact O.6μm Silicon-on-Insulator BCD-technology on 1 μm Buried Oxide is discussed. DMOS performance (n- and p-type) at 180V has been simulated after calibration on 120V devices and first experimental results are given Also the feasibility of milli-Ohm power devices in three level power metal without Cu plating is demonstrated.