Photoluminescence Characterization of Interface Abruptness of GaAs/ AlGaAs Quantum Wells Grown on (411)A and (100) GaAs Substrates

摘要

Heterointerface properties of GaAs/AlGaAs quantum -wells (QW's) with different thickness grown on (411)A and (100) GaAs substrates have been studied by photoluminescence (PL) measurements as a Junction of lattice temperature and excitation power. PL spectra of the samples exhibit distinct peaks due to the n=l excitons corresponding to each well. Full width at half maximum (FWHM) of the PL lines is found to be as small as 3 meV at 13 K, indicating high quality of the samples. The important observation is, however, that the FWHM values are always narrower for the QW's grown on (411)A than on (100). By temperature and excitation power dependence measurements, it is confirmed that the PL linewidth for the QW's on (411)A is superior to those on (100) due to the improved heterointerface quality. Temperature evolution of the PL intensity also shows superiority of the QW interfaces on (411)A in terms of the smooth atomic-size corrugation over the exciton Bohr radius.