Understanding the Electro-thermal and Phase-transformation Processes in Phase-change Materials for Data Storage Applications

摘要

Attempts at the practical utilization of Sb-Te based alloys beyond optical data storage have been made recently by employing these materials in both scanning probe type memories, and in electrical memory devices - namely Phase-Change Random Access Memory (PC-RAM). We have developed models to simulate the electrical, thermal, and phase-change characteristics of this important class of material. In this paper we describe the physical basis of our models and present simulation results for different memory configurations and operating conditions.