NbTiN/SiO2/NbTiN and NbTiN/SiO2/Al tuning circuits for 1 THz waveguide SIS mixers

摘要

Waveguide SIS mixers are presented in which Nb/Al-AlOx/Nb tunnel junctions are integrated with both NbTiN/SiO2/NbTiN and NbTiN/SiO2/Al tuning circuits. The mixers with a NbTiN/SiO2/NbTiN tuning circuit yield relatively low receiver noise temperatures between 700 and 830 GHz, but their sensitivity drops significantly above ～ 850 GHz. In contrast, low-noise heterodyne mixing near 1 THz is observed in mixers incorporating a NbTiN/SiO2/Al tuning circuit. In particular, an uncorrected receiver noise temperature of 585 K is measured at 970 GHz. From an analysis of the receiver sensitivity and gain, it is determined that the loss in the NbTiN ground plane is low (≤ 0.6 dB) below 970 GHz. A decrease in receiver sensitivity above 1 THz is attributed to an onset of rf loss in the NbTiN.