Design Optimization of Low-Power 90nm CMOS SOC Application Using 0.5V Bulk PMOS Dynamic-Threshold with Dual Threshold (MTCMOS): BP-DTMOS-DT Technique

摘要

This paper reports a 0.5V bulk PMOS dynamic-threshold technique enhanced with dual threshold (MTCMOS): BP-DTMOS-DT for design optimization of low-power SOC application using 90nm multi-threshold CMOS technology. Via the HVT/BP-DTMOS-DT-type logic cell technique generated by the special gate-level dual-threshold static power optimization methodology (GDSPOM) procedure, a 0.5V 16-bit multiplier circuit has been designed and optimized, consuming 22% less static leakage power at the operating frequency of 400MHz as compared to the HVT/LVT-type counterpart optimized by the GDSPOM reported before.