A New Trench-Planner Gate MOSFET Structure

摘要

A new trench-planar gate MOSFET (TPMOS) structure is proposed, in which the shallow trench filled with n-type polysilicon is located at the center of n~- drift region between two p-type regions. Compared with conventional VDMOS, the new structure's on-resistance can reduce about 25%, the breakdown voltage can increase 10% and switching loss can retain immovability. Furthermore, the shallow trench structure can be realized by the existing etching process, and retains the advantage of simple technology and low cost. So it can further meet the need of higher voltage power switches application.