Thermosensoric localization of defects in CIS solar modules

摘要

Thermal imaging by an infrared camera is proposed to localize material defects in solar cell modules. The method is demonstrated on two CuInSe/sub 2/ minimodules consisting of 5 and 9 solar cells, respectively. Compared to the optical beam induced current (OBIC) method, the new thermosensoric defect localization (TDL) method is highly sensitive in solar modules and suitable for fabrication control. Shunts in the diode junction and series resistance in the semiconductor layer or the top contact may be differentiated.