Production and commercial insertion of InP HBT integrated circuits

机译：INP HBT集成电路的生产和商业插入

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We have developed an InP-based HBT fabrication line to produce HBT integrated circuits in high volume for government and commercial applications. We present here production results and performance characteristics for InP HBT MMICs specifically designed for consumer products.

机译：我们开发了一种基于INP的HBT制造线，可以为政府和商业应用生产高批量的HBT集成电路。我们介绍了专为消费产品专为INP HBT MMIC的生产结果和性能特征。

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《Annual Gallium Arsenide Integrated Circuit Symposium》|1997年||共4页
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Streit D.C.; Gutierrez-Aitken A.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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专利

1. Fully Integrated D-Band Direct Carrier Quadrature (I/Q) Modulator and Demodulator Circuits in InP DHBT Technology [J] . Carpenter Sona, Abbasi Morteza, Zirath Herbert Microwave Theory and Techniques, IEEE Transactions on . 2015,第5期

机译：InP DHBT技术中的全集成D波段直接载波正交（I / Q）调制器和解调器电路
2. H-Band Power Amplifier Integrated Circuits Using 250-nm InP HBT Technology [J] . Kim Jungsik, Jeon Sanggeun, Kim Moonil, Terahertz Science and Technology, IEEE Transactions on . 2015,第2期

机译：使用250nm InP HBT技术的H波段功率放大器集成电路
3. InP DHBT Integrated Circuits for Fiber-Optic High-Speed Applications [J] . Jean GODIN, Agnieszka KONCZYKOWSKA, Muriel RIET, IEICE Transactions on Electronics . 2006,第7期

机译：用于光纤高速应用的InP DHBT集成电路
4. Production and commercial insertion of InP HBT integrated circuits [C] . Streit D.C., Gutierrez-Aitken A., Cowles J.C., Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual . 1997

机译：InP HBT集成电路的生产和商业插入
5. Ka-Band and W-Band Millimeter-Wave Wideband Linear Power Amplifier Integrated Circuits at 30 GHz and 90 GHz with Greater Than 100 mW OutputPowers in Commercially-Available 0.12 Micron Silicon Germanium HBT Technology [D] . Chang, Michael S. 2017

机译：采用商用0.12微米硅锗HBT技术的30 GHz和90 GHz的Ka波段和W波段毫米波宽带线性功率放大器集成电路，输出功率超过100 mW
6. Wireless Data Transmission at Terahertz Carrier Waves Generated from a Hybrid InP-Polymer Dual Tunable DBR Laser Photonic Integrated Circuit [O] . Guillermo Carpintero, Shintaro Hisatake, David de Felipe, -1

机译：混合InP聚合物双可调DBR激光光子集成电路产生的太赫兹载波无线数据传输
7. Direct Extraction of InP/GaAsSb/InP DHBT Equivalent-Circuit Elements From S-Parameters Measured at Cut-Off and Normal Bias Conditions [O] . Johansen Tom Keinicke, Leblanc Rémy, Poulain Julien, 2016

机译：从截止和正常偏置条件下测量的s参数直接提取Inp / Gaassb / Inp DHBT等效电路元件

Production and commercial insertion of InP HBT integrated circuits

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