Indium-doped ZnO(ZnO:In) films have been prepared on heated Corning 7059 glass by pyrosol spray method. Indium improves the conductivity as an n-type dopant and stimulates grain growth. For films grown at 400/spl deg/C, resistivity of ZnO films decreased from 1.3/spl times/10/sup -2/ /spl Omega/ cm to 3.5/spl times/10/sup -3/ /spl Omega/ cm by doping 1 wt% indium. Furthermore, ZnO:In films grown at higher temperture revealed larger grain sizes and a higher texturization compared to undoped films. A highly textured ZnO:In films with resistivity of 2.5/spl times/10/sup -3/ /spl Omega/ cm, total transmittance of 80% was made at the substrate temperature of 475/spl deg/C, and was milky looking. ZnO:In films did not degrade under hydrogen plasma, and was applied as a protection barrier against hydrogen plasma and the light scattering layer in the SnO/sub 2//ZnO bilayer films. Bilayer films have a resistivity of 8.8/spl times/10/sup -4/ /spl Omega/ cm and total transmittance of 84% at 550 nm, and was proved to have an excellent hydrogen plasma durability.
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