Enhanced performance of PMOS and CMOS circuits using self-aligned MOSFETs with modulation doped Si-Ge channel

摘要

The use of MOS gate Si-SiGe MODFETs to obtain performance enhancement in PMOS and CMOS integrated circuits is described. Device parameters are computed to obtain compatible transfer characteristics which make it possible to operate these MOS gate MODFETs in CMOS configurations. These transistors, potentially operating in the 10 to 60 GHz range, lead to design of high-performance CMOS logic and memory circuits at room temperature, and at 77 K.