Cu/SnAg Double Bump Flip Chip Assembly as an Alternative of Solder Flip Chip on Organic Substrates for Fine Pitch Applications

摘要

Recently, the need of fine pitch flip chip interconnection has been continuously growing. In spite of this trend, solder flip chip interconnections have reached the limit in fine pitch applications of less than about 150pim pitch, because bump bridging between adjacent solder bumps occur. Therefore, the investigation on the fine pitch flip chip structure and its reliability are being needed. Metal column and solder double layered (=double bump) flip chip structure is one of the candidates for fine pitch applications. Double bump flip chip structure provides three advantages: 1) fine pitch flip chip interconnection less than 150驴m due to straight shape of metal column bumps, 2) better thermo-mechanical reliability by changing the height of metal column bumps, and 3) high current-carrying capability due to excellent electrical conductivity of Cu as one of the column bump materials. In this study, Cu (60驴m) / SnAg (20驴m) double bump flip chip were investigated as one of the promising fine pitch interconnections. We successfully demonstrated Cu/SnAg double bump flip chip assembly with 100im pitch on organic PCB substrates without bridged bumps by optimizing the bonding conditions such as bonding temperature profile, bonding force and flux. Assembled Cu/SnAg double bump joints had stable contact resistance of 1214m驴. And then, we studied interfacial reactions and reliability evaluation of Cu/SnAg double bump flip chip assembly. Cu3Sn, Cu6Sn5, Ni3Sn4, (Cu, Ni)6Sn5, and Ag3Sn IMCs were formed at Cu/SnAg double bump joints after the additional reflow and solid-state aging.