Structural Analysis of Na-flux GaN by Nanobeam X-ray Diffraction:Local Lattice Constant Variation Depending on the Growth Mode

摘要

[Introduction] GaN is becoming one of the most important semiconductor materials in modern society, which is widely used in light-emitting diodes, power devices and so on. These requirements are suffering from the quality of GaN substrates. However, the Na-Flux method utilizing the multi-point seed technique (MPST) and the flux film coated technique (FFCT) has successfully prepared bulk GaN substrates with extremely high quality [1]. For further application and potential performance evaluation, it is necessary to clarify detailed structural characteristics of the substrates. In this research, we focus on bulk GaN grown with MPST combined with FFCT. Taking advantage of nanobeam X-ray diffraction (nanoXRD), as well as other analytical techniques, local lattice constant distribution is quantitatively analyzed.