SiGe Band-to-Band Tunneling Calibration Based on p-i-n Diodes: Fabrication, Measurement and Simulation

摘要

For the purpose of calibrating the nonlocal Kane band-to-bandtunneling model for Si_(1-x)Ge_x based on TCAD simulations, SiGe pi-n tunnel diodes are fabricated by epitaxial growth. The quality ofthe tunnel junction is examined by the ideality factors of the diodesand the band-to-band tunneling regime is determined based onactivation energy extractions. By comparing experimental data tosimulations with theoretically calculated prefactors of Kane’smodel, we conclude that the TCAD simulator overestimates thetunneling current in strained Si_(1-x)Ge_x diodes.