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Open Issues in Mask Technology as EUV Enters High Volume Manufacturing

机译:随着EUV进入大批量生产,掩模技术中的未解决问题

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After years of optimistic projections and false starts, 2019 is finally the year that EUV will enter volume production.Mask shop investment in EUV-capable equipment, including writing, inspection, metrology, repair, review and cleaningtools as well as related infrastructure for storage, transportation, and pellicle support has been substantial. However, inboth mask shops and wafer fabs, key questions remain unanswered even as high volume manufacturing (HVM) begins inthe fab. We will highlight several of these questions that still need to be answered to develop comprehensive, end-to-endstrategies for mask inspection, use, and qualification strategies. In particular, we will show how uncertainty over pellicletechnology options and timing cascade into a series of questions related to reticle qualification flows throughout thelifetime of a mask.Additional uncertainty comes from the lack of data on reticle contamination mechanisms during use in high-power EUVexposure tools. Concerns over hydrocarbon deposition and reaction with intense EUV photons as well as with the out-ofbandDUV present in the system, will require the development of careful monitoring and re-qualification plans. Reticlerequalification cycles will be gated not just by the number of wafers exposed, but by the number of times a reticle isloaded and unloaded from the scanner and how long it sits in storage between cycles. We anticipate that a combinationof wafer-based and reticle-based inspection will be required to fully ensure reticle quality, especially if a pellicle solutionis adopted which does not allow 193nm based inspection. These tradeoffs and uncertainties will be discussed in thecontext of a full, mask blank to wafer fab reticle qualification strategy for EUV volume manufacturing.
机译:经过多年的乐观预测和假启动,2019年终于今年EUV将进入批量生产。 面具商店投资在高效的设备,包括写作,检查,计量,维修,审查和清洁 用于存储,运输和薄膜支持的工具以及相关基础设施一直很大。但是,在 掩盖商店和晶圆厂,关键问题甚至在高批量制造(HVM)开始时仍未答复 工厂。我们将突出一些这些问题,仍然需要回答开发全面,最终到底 面具检验,使用和资格策略的策略。特别是,我们将展示对薄片的不确定性 技术选择和时序级联进入与掩盖素质资格流动的一系列问题 面具的寿命。 在高功率EUV中使用期间,额外的不确定性来自于在高功率EUV中使用的掩模版污染机制的数据 曝光工具。对碳氢化合物沉积和强烈EUV光子的反应以及带外带的疑虑 DUV存在于系统中,需要开发仔细的监测和重新资格计划。掩盖 不仅仅是通过暴露的晶片数量所揭露的需求周期,而是通过掩盖的次数是 从扫描仪加载和卸载,循环之间存储有多长时间。我们预计会组合 基于晶圆和基于掩盖的检查,需要充分确保掩盖质量,特别是如果薄膜溶液 采用不允许基于193nm的检查。这些权衡和不确定因素将讨论 完整的上下文,掩盖空白到晶圆FAB的丝网掩模型资格策略,用于EUV卷制造。

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