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Temperature sensitivity of dielectric resonators and dielectricresonator oscillators

机译:电介质谐振器和电介质的温度敏感性谐振器振荡器

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Experiments were performed on L-band and S-banddielectric resonators (DRs) and direct-resonator-based oscillators(DROs) to investigate the details of their behavior with variation intemperature. Measurements were performed using commercially availableZr/Sn titanate and barium tetratitanate dielectric resonator materialsenclosed in metal cavities. The results indicate that the temperaturecoefficient of the resonant frequency, τf, supplied byvendors of the high-dielectric-constant ceramics, is not sufficient topredict accurately a DRO's total frequency excursion over a giventemperature range. Significant second-order contributions to thefrequency versus temperature characteristics were observed, with valuesranging from -27 to +20 p.p.b./° C2. In addition thecavity material used to enclose the DR can significantly alter itstemperature characteristic. Procedures have been developed to aid in theestimation of a DRO's characteristic temperature sensitivity. They canbe used to adjust the DRO design to minimize the total frequencyexcursion over a desired temperature range
机译: L 频段和 S 频段上进行了实验 介电谐振器(DR)和基于直接谐振器的振荡器 (DRO)来调查其行为的详细信息,其中包括 温度。使用市售的仪器进行测量 Zr / Sn钛酸酯和四钛酸钡介电共振器材料 封闭在金属腔中。结果表明温度 谐振频率的系数τ f 由 高介电常数陶瓷的销售商不足以 准确预测给定条件下DRO的总频率偏移 温度范围。对 观察到频率与温度的关系,并给出 范围为-27至+20p.p.b./°C 2 。除此之外 用于封装DR的空腔材料会显着改变其DR 温度特性。已经制定了程序来帮助 DRO的特征温度敏感性的估计。他们能 用于调整DRO设计以最小化总频率 在所需温度范围内的偏移

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