Abstract: We evaluated three chemically amplified positive-toneresists which are mainly based oncyclo-hexyl-carboxylic- acid-silsesquioxane. A resisthad a good resolution capability of K$-1$/ $EQ 0.435and a process window of 0.4 $mu@m depth of focus at0.15 $mu@m L/S pattern, however its dissolutioncharacteristics was poor. The resist that was improvedthe resistance to aqueous base developer, had anexcellent resolution capability of K$-1$/ $EQ 0.404. Ithad a permissive sensitivity of 13 mJ/cm$+2$/. Thebilayer pattern profile dependencies on thetransparency of the upper layer resist and the lineedge roughness of the resist before and after thedry-development process were also examined. Theseresults showed the applicability of the silsesquioxanebased resist to the bilayer resist process for ArFlithography.!10
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