Impact of Electron trapping on Energy Distribution Characterization of NBTI-Related Defects for Si p-FinFETs

摘要

We present an experimental study on the impact of electron trapping (ET) on energy profile characterization of defects in Si p-type FinFETs under negative bias temperature condition, by adopting an energy profiling technique. It's difficult to observe the peak of energy density in the energy profile of generated traps, because the extra electron tunneling from accumulation layer aggravates the discharging of hole detrapping during measurement. After compensating for the ET effect, it is found that the energy density of generated traps shows two visible peaks around Ec, one is around Ev+ 1.04 eV, and another is around Ev+ 1.39 eV, Both two peaks exhibit consistent dependence on the stress time, stress bias, and stress temperature, and their peak values are close to each other, indicating that they could have same physical origin.