A new analog behavioral SPICE macro model with self-heating effects and 3rd quadrant behavior for Silicon Carbide Power MOSFETs

摘要

Self-heating effects in Silicon Carbide Power MOSFETs have been incorporated into SPICE through sub-circuits including thermal models. The dynamic link between electrical and thermal components allows accurate prediction of electrical performance with respect to temperature and the estimation of junction temperatures for devices operating in power applications. Moreover, the 3rd quadrant static behavior, which is typical for SiC MOSFETs, has been incorporated. Accurate simulation of the 3rd quadrant performance is extremely important for aspects such as the evaluation of losses in traction inverter applications, which often employ SiC MOSFETs.