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ST's MDmesh™ M6 technology improves efficiency in LLC resonant half-bridge converters

机译:意法半导体的MDmesh™M6技术提高了LLC谐振半桥转换器的效率

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This paper compares the performance of ST's latest high-voltage MDmesh(TM) M6 series MOSFETs with leading competitor devices using an open-loop LLC resonant half-bridge converter as the test vehicle. The comparison regards system power efficiency, device switching losses and thermal characteristics. We also examine COSS capacitance more closely, as it plays an important role in LLC resonant converters, especially at zero and light load. For this analysis, the energy storage (EOSS) value given in the datasheets was used to better determine the switching losses at light load.
机译:本文将ST最新的高压MDmesh™M6系列MOSFET与领先竞争对手的设备(采用开环LLC谐振半桥转换器作为测试工具)的性能进行了比较。比较涉及系统功率效率,器件开关损耗和热特性。我们还更加仔细地研究了COSS电容,因为它在LLC谐振转换器中起着重要的作用,尤其是在零负载和轻负载下。对于此分析,使用数据表中给出的储能(EOSS)值来更好地确定轻负载时的开关损耗。

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