CuAg/Al2O3/CuAg Threshold Switching Selector for RRAM Applications

摘要

Resistive random access memory (RRAM) based on the migration of metal ions typically comprises a metal-insulator-metal sandwich with an inert electrode at one terminal, and electrochemically active electrode at the other terminal [1]. The advantages of using active electrode in non-volatile memristors include fast switching speed, low operating voltage and high ON/OFF ratio, while a major disadvantage is the data retention due to high migration rate [2]. To achieve long-term reliability, Yeon et al. [3] proposed the concept of alloying electrode and prepared Au/SiO₂/SiN_x/CuAg memristor with uniform and continuously switchable behaviors. Inspired by this philosophy, we studied the device performances of metal/Al₂O₃/metal selectors with CuAg alloy electrode and compared it with previously reported Cu/Ag electrodes [4], [5].