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Switching behavior of single nanowires inside dense nickel nanowire arrays

机译:单纳米线内致密镍纳米线阵列的切换行为

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The suitability of nickel nanowire arrays for perpendicular magnetic storage media with areal densities beyond the superparamagnetic limit (>70 Gbit/in{sup}2) will be analyzed in this paper Highly ordered alumina pore channel arrays are used as templates for the fabrication of magnetic nanowire arrays with a periodicity of 65 (180 Gbit/in{sup}2) and 100 nm (75 Gbit/in{sup}2) and pore diameters between 30 and 55 nm A nearly perfect hexagonal arrangement for the magnetic columns occurs only inside very narrow process windows for periodic distances of 65,100 and 500 nm, and - in contrast to most publications in this field - a degree of pore filling of almost 100% was achieved (Fig 1).
机译:在本文中将分析镍纳米线用于垂直磁性储存介质的垂直磁性储存介质的适用性,在本文中,将在本文中分析高度有序的氧化铝孔通道阵列,用于制造磁的模板周期性为65(180g / sup} 2)和100nm(75 gbit / In {sup} 2)和孔径为30至55 nm之间的孔径,仅在磁柱的几乎完美的六边形布置中发生对于65,100和500nm的周期性距离非常窄的过程窗口,与大多数出版物相比,实现了几乎100%的孔隙填充程度(图1)。

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