首页> 外文会议>IEEE Energy Conversion Congress and Exposition >Power cycling test of a 650 V discrete GaN-on-Si power device with a laminated packaging embedding technology
【24h】

Power cycling test of a 650 V discrete GaN-on-Si power device with a laminated packaging embedding technology

机译:采用层压封装嵌入技术的650 V分立式GaN-on-Si功率器件的功率循环测试

获取原文

摘要

A GaN-on-Si power device is a strong candidate to replace power components based on silicon in high-end market for low-voltage applications, thanks to its electrical characteristics. To maximize opportunities of the GaN device in field applications, a package technology plays an important role in a discrete GaN power device. A few specialized package technologies having very lower stray inductance and higher thermal conductivity have been proposed for discrete GaN-on-Si power devices. Despite their superior performance, there has been little discussion of their reliability. The paper presents a power cycling test of a discrete GaN power device employing a laminated embedded packaging technology subjected to 125 degrees Celsius junction temperature swing. Failure modes are described with collected electrical characteristics and measured temperature data under the test. In conclusion, physical degradation of a solder layer between a tested discrete chip and an aluminum print circuit board is represented by a scanning acoustic microscope and a scanning electron microscope. A drain-to-source leakage current increase after the failure is reported in resemblance with previous studies.
机译:硅基氮化镓功率器件凭借其电气特性,在高端市场的低压应用中,很可能替代基于硅的功率器件。为了使GaN器件在现场应用中的机会最大化,封装技术在分立GaN​​功率器件中起着重要作用。对于离散的GaN-on-Si功率器件,已经提出了一些具有非常低的杂散电感和较高的导热率的专用封装技术。尽管它们具有出色的性能,但对其可靠性的讨论很少。本文介绍了采用层压嵌入式封装技术的分立式GaN功率器件的功率循环测试,该器件经受了125摄氏度的结温摆幅。通过收集的电气特性和测试中测得的温度数据来描述故障模式。总而言之,用扫描声显微镜和扫描电子显微镜表示在测试的分立芯片和铝印刷电路板之间的焊料层的物理退化。据报道,失效后漏源漏电流增加,与以前的研究相似。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号