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MEASUREMENT OF LEADFRAME STRAIN IN ELECTRICALLY ACTIVE POWER SEMICONDUCTORS

机译:电有功功率半导体中铅应变的测量

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In this work, thermal-mechanical leadframe strain in an electrically active IGBT was measured using electronic speckle pattern interferometry (ESPI). ESPI is a non-contact optical technique capable of high resolution surface displacement measurements. The significant contribution of this paper is an experimental methodology by which strain can be measured in electrically active devices. A 3-D ESPI test stand was developed, combining two cameras to simultaneously capture the local (interconnect level) and global (device level) displacements. Through the combination of incremental sub-loads and mathematical recorrelation of speckle patterns, device power loads have been measured (which would have been otherwise impossible due to speckle decorrelation, which limits measurement of large deformations). A model-based tracking technique was developed from coupled experimental noise measurements and FE modeling - allowing for optimal strain solution to be extracted from noisy displacement results. The developed and experimentally-validated thermal-mechanical FE strain model agreed to within 7% of ESPI strain measurements.
机译:在这项工作中,使用电子散斑图干涉仪(ESPI)测量了电有源IGBT中的热机械引线框应变。 ESPI是一种能够进行高分辨率表面位移测量的非接触式光学技术。本文的重要贡献是一种实验方法,通过该方法可以测量电有源器件中的应变。开发了3-D ESPI测试台,结合了两个摄像头以同时捕获局部(互连水平)和全局(设备水平)位移。通过增量子负载和散斑图的数学相关性的组合,已经测量了设备功率负载(否则由于散斑去相关而无法实现,这会限制对大变形的测量)。基于耦合的实验噪声测量和有限元建模开发了基于模型的跟踪技术-允许从嘈杂的位移结果中提取最佳应变解。开发并通过实验验证的热机械有限元应变模型在ESPI应变测量的7%之内。

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