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An on-chip integrated III–V / CMOS 125MSps 6-bit SAR ADC

机译:片上集成的III–V / CMOS 125MSps 6位SAR ADC

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This paper presents a fully integrated on-chip III-V HEMT and CMOS hybrid technology, implementing a 6b 125MSps successive approximation register (SAR) ADC. On-chip integration is achieved by using a hybrid PDK that permits direct integration of Au-free III-V devices into a foundry-proven CMOS process. The prototype utilizes an on-chip integrated InGaAs sampling switch and remaining circuits in CMOS. A “more than Moore” design and fabrication methodology has been adopted to overcome CMOS performance limitation. On-chip InGaAs switch integration results in reduction of parasitic elements, enhance the settling speed and superior dynamic performance. In this work the ADC consumes 1.99mW from a 1.8V supply achieving 33.7dB SNDR at nyquist and occupies 0.0225mm2.
机译:本文介绍了一种完全集成的片上III-V HEMT和CMOS混合技术,实现了6b 125MSps逐次逼近寄存器(SAR)ADC。片上集成是通过使用混合PDK实现的,该混合PDK允许无金的III-V器件直接集成到经过铸造验证的CMOS工艺中。该原型利用片上集成的InGaAs采样开关和CMOS中的其余电路。为了克服CMOS性能的局限性,采用了“摩尔定律”以外的设计和制造方法。片上InGaAs开关集成可减少寄生元素,提高建立速度并具有出色的动态性能。在这项工作中,ADC从1.8V电源消耗1.99mW的功率,在奈奎斯特达到33.7dB的SNDR,并占用0.0225mm2的空间。

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