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A COMPOSITE Cu / HOPG HEAT SPREADER FOR IMMERSION COOLING OF HIGH POWER CHIPS

机译:用于大功率芯片浸没冷却的复合Cu / HOPG散热器

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Presented are the results of a 3-D numerical analysis of a composite heat spreader for immersion cooling of a 20 × 20 mm microprocessor. The spreader is comprised of two 0.5 mm thick Copper (Cu) laments separated by a layer of highly ordered pyrolytic graphite (HOPG), 0.25-1.0 mm thick. The exposed surface of the top Cu lament has an average roughness, Ra = 1.79 μm and is cooled by saturation nucleate pool boiling of PF-5060 dielectric liquid. Investigate is the impact of δ_(HOPG) on the total power removed, the maximum temperature of the underlying chip, T_(max), and mitigating the chip hot spots. Increasing δ_(HOPG) increases the total power removed, but also increases T_(max). The spreader with a 1.0 mm-thick δ_(HOPG) is capable of removing 318 W, without exceeding 90% of the critical heat flux (CHF), at T_(max) = 120°C. This power removal is significantly higher than that with an all Cu spreader of the same thickness of 90 W, but at much lower T_(max) of 67°C. Composite spreaders with δ_(HOPG) = 0.25, 0.5, and 0.75 mm are capable of removing up to 160 W at T_(max) = 85°C, 228 W at 100°C, and 292W at 115°C, respectively. The HOPG suppresses the transmission of hot spots to the spreader surface and increasing δ_(HOPG) does not mitigate the hot spots.
机译:呈现的是用于20×20 mm微处理器浸入式冷却的复合散热器的3-D数值分析结果。撒布机由两层0.5毫米厚的铜(Cu)薄片组成,这两层由一层0.25-1.0毫米厚的高度有序的热解石墨(HOPG)隔开。顶部铜la的裸露表面平均粗糙度Ra = 1.79μm,并通过PF-5060电介质液体的饱和成核池沸腾进行冷却。研究δ_(HOPG)对去除的总功率,底层芯片的最高温度T_(max)以及减轻芯片热点的影响。增加δ_(HOPG)会增加去除的总功率,但也会增加T_(max)。在T_(max)= 120°C时,具有1.0 mm厚δ_(HOPG)的散布器能够去除318 W,而不会超过临界热通量(CHF)的90%。与相同厚度90 W的全铜散布器相比,此功率移除明显更高,但T_(max)却低得多,仅为67°C。 δ_(HOPG)= 0.25、0.5和0.75 mm的复合散布器能够分别在T_(max)= 85°C,100°C的228 W和115°C的292W的情况下去除高达160 W的功率。 HOPG抑制了热点向散布器表面的传播,并且增加δ_(HOPG)不会减轻热点。

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