Simulation of thermal crosstalk of resistive switching memory in three-dimensional crossbar structure

摘要

Based on three-dimensional (3D) Fourier heat flow equation and numerical simulation, we investigated thermal crosstalk of resistive switching memory in 3D crossbar structure for the first time. Our results show that the transient thermal effect will dominate reset process. With the decrease of RS device size, the thermal crosstalk would remarkably deteriorate the retention of RS memory device and disable data storage. Some clues to improve the thermal crosstalk of RS device and RS performance in 3D crossbar structure are also provided.