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3D memory with shared lithography steps: The memory industry's plan to “cram more components onto integrated circuits”

机译:具有共享光刻步骤的3D存储器:存储器行业的计划“将更多组件塞入集成电路”

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In his 1965 paper titled “cramming more components onto integrated circuits” [1], Gordon Moore predicted the number of components on a chip would increase exponentially with time due to continual reduction of feature sizes. That paradigm has continued successfully for the past 50 years, but cracks are starting to appear. Lithography is becoming prohibitively expensive and component quality is expected to degrade significantly beyond the 7nm node. To lower cost per bit further without relying on feature size scaling, monolithic 3D flash memories are being introduced where lithography steps are shared among multiple memory layers. In this paper, I review the flash memory industry's direction and describe 3D concepts that can scale other parts of the memory hierarchy.
机译:戈登·摩尔(Gordon Moore)在1965年发表的题为“将更多组件塞入集成电路”的论文中[1]预测,由于特征尺寸的不断减小,芯片上组件的数量将随着时间呈指数增长。在过去的50年中,这种范例已经成功地持续了下去,但是裂缝开始出现。光刻技术变得越来越昂贵,并且组件质量预计将大大降低,超过7nm节点。为了在不依赖特征尺寸缩放的情况下进一步降低每位成本,引入了单片3D闪存,其中在多个存储层之间共享光刻步骤。在本文中,我回顾了闪存行业的发展方向,并描述了可以扩展内存层次结构其他部分的3D概念。

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