A circuit technique for compensating the device-to-device variation in Bandgap voltage references is presented. The circuit senses the variation of V{sub}(be) of the transistor with process and pumps into the emitter a PTAT current in direction opposite to the variation to bring it back to the right value. It also exploits the temperature coeff. of MOS V{sub}t to compensate for higher order temperature variations. Silicon results show a variation of 60mV across different lots and less than 50 PPM across temperature (-40°C to 130°C). The prototype was built in a 0.18μ CMOS digital process with low β PNP transistors.
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机译：提出了一种用于补偿带隙电压参考的装置到设备变化的电路技术。该电路感测晶体管的v {sub}（be）的变化，该晶体管与工艺和泵进入发射极的达到与变化相反的方向上的PTAT电流，以使其回到右值。它还利用了温度COEFF。 MOS V {Sub} T补偿更高阶温度变化。硅结果显示在不同批次中60mV的变化，横跨温度小于50ppm（-40°C至130°C）。原型内置于具有低βPNP晶体管的0.18μCMOS数字过程中。
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