A CMOS Compatible WOx RRAM with Optimized Switching Operations

摘要

The tungsten oxide (WOx) RRAM devices using 0.18um CMOS process are designed, fabricated and characterized. The process flow is completely compatible with CMOS back-end-of-line process which is presented in this paper. In order to understand the switching mechanism and improve the memory cell performance, various process conditions have been studied and compared. The RRAM cell exhibits good memory properties, such as: fast set and reset speed (＜20ns), low operation voltage (＜4V), high switching uniformity, and good endurance characteristics. It is also observed that different operation conditions can affect the RRAM cell switching properties significantly. The trade-off between performances and tolerable operation conditions is discussed.