Extremely high current density over 1000 A/cm² operation in m-plane GaN small size LEDs with low efficiency droop and method for controlling radiation pattern and polarization

摘要

A high current density over 1000 A/cm² operation in a small chip size m-plane GaN-LED has been successfully demonstrated. The m-plane GaN-LED with a chip size 450 × 450 μm² has emitted 1353 mW in a light output power and 39.2% in an external quantum efficiency (EQE) at 1000 A/cm² (1134 mA). The m-plane GaN-LED has showed asymmetric radiation characteristics. The radiation patterns are controlled by the surface of LED packages, the height of the LED chips, and the striped texture on the top m-plane surface.