Liftoff lithography of metals for extreme ultraviolet lithography mask absorber layer patterning

摘要

The authors present a process for patterning Extreme Ultraviolet Lithography (EUVL) mask absorber metal usingelectron beam evaporation and bi-layer liftoff lithography. The Line Edge Roughness (LER) and Critical DimensionUniformity (CDU) of patterned chro