In this poster we will present the photo-electrical effect of pristine and nitric acid treated graphene field effect transistors made by chemical vapor deposition (CVD). The results of the decreased electrical conductance and shift of Dirac point arise from the molecular photodesorption from graphene. When post treated with nitric acid the photodesorption efficiency was decrease from 52% to 21%, which was proposed to be caused by the passivation of oxygen-bearing functionalities to CVD graphene structural defects. This result provides a new strategy of stabilizing the electrical performance of CVD graphene which is promising candidate as highly conductively photoelectrical material.
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