Threshold Read Method for Multi-bit Memristive Crossbar Memory

摘要

Memristors have raised great interest in various logic and non-volatile memory applications. They are especially a good candidate for crossbar memory applications for their capability of being integrated in high densities and low switching power consumptions. In this paper we propose a novel read/write circuitry for memristive crossbar memories that enables reliable multilevel data storage in single cell while eliminating the use of reference resistors thus reducing the number of comparisons required. The proposed method can be used independent of the nonlinear characteristics of the memristive device and it can also be utilized by memory cells incorporating a memristor and series diodes.