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Quantum Mechanical Treatment on Modeling of Drain Current, Capacitances and Transconductances for Thin Film Undoped Symmetric DG MOSFETs

机译：薄膜无掺杂对称DG MOSFET漏极电流，电容和跨导建模的量子力学处理

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《2011 International Conference on Nanoscience, Technology and Societal Implications》|2011年|p.1-6|共6页
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Bora Nipanka; Baruah Ratul Kr.;
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1. Modeling of drain current, capacitance and transconductance in thin film undoped symmetric DG MOSFETs including quantum effects [J] . Saeed Mohammadi, Ali Afzali-Kusha Microelectronics reliability . 2010,第3期

机译：薄膜非掺杂对称DG MOSFET的漏极电流，电容和跨导建模，包括量子效应
2. ANALYTICAL MODELING OF DRAIN CURRENT, CAPACITANCE AND TRANSCONDUCTANCE IN SYMMETRIC DOUBLE-GATE MOSFETs CONSIDERING QUANTUM EFFECTS [J] . VIMALA PALANICHAMY, N. B. BALAMURUGAN International journal of nanoscience . 2013,第1期

机译：考虑量子效应的对称双栅MOSFET漏极电流，电容和跨导的解析模型
3. Drain Current Models For Single-Gate Mosfets & Undoped Symmetric & Asymmetric Double-Gate SOI Mosfets And Quantum Mechanical Effects: A Review [J] . SUBHA SUBRAMANIAM, R.N.AWALE, SANGEETA M.JOSHI International Journal of Engineering Science and Technology . 2013,第1期

机译：单栅MOSFET，未掺杂对称和非对称双栅SOI MOSFET的漏电流模型和量子力学效应：综述
4. Quantum Mechanical Treatment on Modeling of Drain Current, Capacitances and Transconductances for Thin Film Undoped Symmetric DG MOSFETs [C] . Bora Nipanka, Baruah Ratul Kr. International Conference on Nanoscience, Technology and Societal Implications . 2011

机译：薄膜未掺杂对称DG MOSFET的漏极电流，电容和跨导模型的量子力学处理
5. Modeling the current-voltage (I-V) characteristics of the MOSFET device with quantum mechanical effects due to thin oxide near silicon/silicon dioxide interface using asymptotic methods. [D] . Abebe, Henok. 2002

机译：使用渐近方法，利用靠近硅/二氧化硅界面的薄氧化物，利用量子力学效应对MOSFET器件的电流-电压（I-V）特性进行建模。
6. A quasi-ballistic drain current charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime [O] . Vyas R. Murnal, C. Vijaya 2019

机译：具有位置载流子散射相关性的准弹道漏电流电荷和电容模型对纳米级对称DG MOSFET有效
7. A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime [O] . Vyas R. Murnal, C. Vijaya 2019

机译：具有位置载波散射依赖性的准弹出电流，电荷和电容模型，用于纳米级别的对称DG MOSFET有效
8. Impact of Unintentional Discrete Charges in a Nominally Undoped Channel of a Thin Body Double Gate MOSFET: Classical to Full Quantum Simulation [R] . Martinez, A. , Barker, J. R. , Svizhenko, A. , 2006

机译：无意离散电荷对薄体双栅极mOsFET的标称无效通道的影响：经典到全量子模拟

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