VerilogA modeling of the memristor for circuit applications

摘要

The memristor has attracted great attention in recent years due to the high demand of nano-sized high performance nonvolatile memories. Furthermore, recent breakthrough in nanotechnology makes the fabrication of the memristor a reality. In this work, the switching mechanism and the resistive switching behavior that take place in the memristor are introduced. The ionic transportation mechanism is used to explain the resistive switching process. In addition, a working model for the memristor that based on the existing oxygen vacancy migration mechanism is conducted. A VerilogA model of the memristor that based on this working model is proposed. Simulation results using this VerilogA model compliment existing proposals well. In conclusion, the future of the memristor is promising.