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Electron Transition between Weakly Coupled Concentric Quantum Rings

机译:弱耦合同心量子环之间的电子跃迁

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摘要

We investigate the electron wavefunction localization in double concentric quantum rings when a perpendicular magentic field is applied. In weakly coupled double quantum ring (DCQR), it is possible the situation, when the single electron energy levels associated with different rings may crossed. To avoid degenarasy, the anticrossing of these levels has a place. We show that in this DCQR the electron spatial transition between the rings can occurr due to the electron level anti-crossing. The anti-crossing of the levels with different radial quantum numbers provides the conditions when the electron tunneling between rings becomes possible. To study electronic structure of the semiconductor DCQR, the single sub-band effective mass approach was used. Results of numerical simulation for the electron transition are presented for DCQRs of different geometry.
机译:当应用垂直磁场时,我们研究了双同心量子环中的电子波函数定位。在弱耦合双量子环(DCQR)中,可能存在与不同环相关的单电子能级越过的情况。为避免退化,这些水平的反交叉必不可少。我们显示在此DCQR中,由于电子能级的反交叉,环之间的电子空间跃迁会发生。具有不同径向量子数的能级的反交叉提供了当环之间的电子隧穿成为可能时的条件。为了研究半导体DCQR的电子结构,使用了单子带有效质量法。对于不同几何形状的DCQR,给出了电子跃迁的数值模拟结果。

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