Schematic protection method from influence of total ionization dose effects on threshold voltage of MOS transistors

摘要

Modern integrated circuits (IC) operate in environment of various destabilizing factors which have essential influence on the operation of these circuits and often even disturb the normal operation. One of these destabilizing factors is the cosmic radiation, particularly total ionization dose effects (TID). In this paper influence of TID effects on threshold voltages of MOS transistors is discussed. A schematic protection method from these effects is presented.